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PD - 94008
IRFP250N
HEXFET(R) Power MOSFET
l l l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements
D
VDSS = 200V RDS(on) = 0.075
G S
ID = 30A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
30 21 120 214 1.4 20 315 30 21 8.6 -55 to +175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.24 ---
Max.
0.7 --- 40
Units
C/W
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10/09/00
IRFP250N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 200 --- --- 2.0 17 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.26 --- --- --- --- --- --- --- --- --- --- 14 43 41 33 4.5 7.5 2159 315 83
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.075 VGS = 10V, ID = 18A 4.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 18A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 123 ID = 18A 21 nC VDS = 160V 57 VGS = 10V, See Fig. 6 and 13 --- VDD = 100V --- ID = 18A ns --- RG = 3.9 --- RD = 5.5, See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 30 showing the A G integral reverse --- --- 120 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 18A, VGS = 0V --- 186 279 ns TJ = 25C, IF = 18A --- 1.3 2.0 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
ISD 18A, di/dt 374A/s, VDD V(BR)DSS,
TJ 175C
Starting TJ = 25C, L = 1.9mH
RG = 25, IAS = 18A. (See Figure 12)
Pulse width 300s; duty cycle 2%.
2
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IRFP250N
1000
I D , Drain-to-Source Current (A)
100
10
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
1
4.5V
4.5V
1
0.1
0.01 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
0.1 0.1
20s PULSE WIDTH TJ = 175C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance (Normalized)
3.5 3.0 2.5 2.0 1.5 1.0 0.5
ID = 30A
I D , Drain-to-Source Current (A)
100
TJ = 175 C
10
TJ = 25 C
1
0.1 4.0
V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0
0.0 -60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFP250N
5000
4000
Coss = Cds + Cgd
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = C gd
16
ID = 18A
V DS= 160V V DS= 100V V DS= 40V
12
C, Capacitance(pF)
3000
Ciss
8
2000
Coss
1000
4
Crss
0 1 10 100 1000
0 0 20 40 60 80 100
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
1000
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
100
TJ = 175 C
10
ID , Drain Current (A)
100 10us
100us 10 1ms
TJ = 25 C
1
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
1 1
TC = 25 C TJ = 175 C Single Pulse
10 100
10ms 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
4
Fig 8. Maximum Safe Operating Area
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IRFP250N
RD
35 35
VDS VGS D.U.T.
+ VDD
30 30
RG
ID , Drain Current (A) ID , Drain Current (A)
25 25 20 20 15 15 10 10 5 5 0 0 25 25 50 50 75 100 125 150 175 175
-
10V
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
VDS 90%
125 150 TC 75 , Case100 Temperature ( C) TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
1
Fig 10b. Switching Time Waveforms
Thermal Response(Z thJC )
D = 0.50
0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJC + TC 0.0001 0.001 0.01 0.1 1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFP250N
EAS , Single Pulse Avalanche Energy (mJ)
800
15V
ID 7.3A 13A BOTTOM 18A TOP
VDS
L
D R IV E R
600
RG
20V
D .U .T
IA S tp
+ - VD D
A
400
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S tp
200
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFP250N
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
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IRFP250N
Package Outline
TO-247AC Outline Dimensions are shown in millimeters (inches)
1 5.90 (.6 2 6) 1 5.30 (.6 0 2) -B3.65 (.1 43 ) 3.55 (.1 40 ) 0.25 (.0 1 0) M -A5 .50 (.21 7) 2 0 .30 (.80 0) 1 9 .70 (.77 5) 1 2 3 -C1 4.8 0 (.5 83 ) 1 4.2 0 (.5 59 ) 4 .3 0 (.1 70 ) 3 .7 0 (.1 45 )
LE A D A S S IG N M E N TS 1 2 3 4 G A TE D R A IN SOURCE D R A IN
-DDBM 5 .3 0 (.20 9 ) 4 .7 0 (.18 5 ) 2 .5 0 (.08 9) 1 .5 0 (.05 9) 4
2X
5.50 (.2 1 7) 4.50 (.1 7 7)
NOTES: 1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 2 C O N TR O LLIN G D IM E N S IO N : IN C H . 3 C O N F O R M S TO JE D E C O U TLIN E T O -247-A C .
2 .40 (.09 4) 2 .00 (.07 9) 2X 5.45 (.2 1 5) 2X
1 .4 0 (.0 56 ) 3 X 1 .0 0 (.0 39 ) 0 .2 5 (.0 10 ) M 3 .4 0 (.1 33 ) 3 .0 0 (.1 18 ) C AS
0 .80 (.03 1) 3X 0 .40 (.01 6) 2.60 (.1 0 2) 2.20 (.0 8 7)
Part Marking Information
TO-247AC
E XAM P L E : TH IS IS A N IR F P E3 0 W ITH A SS E M B L Y LOT CODE 3A1Q
A
IN TER N A TIO N A L R E C T IF IE R LOGO A S SE M B L Y LOT CODE
P A R T N U M B ER IR F P E 3 0 3 A 1 Q 9 3 02 D A TE C O D E (YYW W ) YY = YE A R W W W EE K
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00
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